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Cannon, James M.; Loveless, T. Daniel; Estrada, Rafael; Boggs, Ryan; Lawrence, S. P.; Santos, Gabriel; McCurdy, Michael W.; Sternberg, Andrew L.; Reising, Donald R.; Finzell, Thomas; Cannon, Ann
IEEE transactions on nuclear science, 05/2021, Letnik: 68, Številka: 5Journal Article
The distribution of single-event upsets (SEUs) in commercial off-the-shelf (COTS) static random access memory (SRAM) has generally been thought to be uniform in a device. However, process-induced variation within a device gives rise to variation within the cell-level electrical characteristic known as the data retention voltage (<inline-formula> <tex-math notation="LaTeX">V_{\mathrm{ DR}} </tex-math></inline-formula>). Furthermore, <inline-formula> <tex-math notation="LaTeX">V_{\mathrm{ DR}} </tex-math></inline-formula> has been shown to directly influence the critical charge (<inline-formula> <tex-math notation="LaTeX">Q_{\mathrm{ C}} </tex-math></inline-formula>) necessary for stored data to upset. Low-energy proton irradiation of COTS SRAMs exhibits a preference toward upsetting cells with lower <inline-formula> <tex-math notation="LaTeX">Q_{\mathrm{ C}} </tex-math></inline-formula>. An electrical procedure is presented to map relative cell critical charge values without knowledge of the underlying circuitry, allowing customized device usage. Given cell-level <inline-formula> <tex-math notation="LaTeX">Q_{\mathrm{ C}} </tex-math></inline-formula> knowledge, a device can have its cells "screened" such that those with low <inline-formula> <tex-math notation="LaTeX">Q_{\mathrm{ C}} </tex-math></inline-formula> are not used to store data. This work presents the results such a screening process has on the SEU per bit cross section.
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