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Nuccio, L; Willis, M; Schulz, L; Fratini, S; Messina, F; D'Amico, M; Pratt, F L; Lord, J S; McKenzie, I; Loth, M; Purushothaman, B; Anthony, J; Heeney, M; Wilson, R M; Hernández, I; Cannas, M; Sedlak, K; Kreouzis, T; Gillin, W P; Bernhard, C; Drew, A J
Physical review letters, 05/2013, Letnik: 110, Številka: 21Journal Article
Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.
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