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Syed, Nitu; Zavabeti, Ali; Messalea, Kibret A; Della Gaspera, Enrico; Elbourne, Aaron; Jannat, Azmira; Mohiuddin, Md; Zhang, Bao Yue; Zheng, Guolin; Wang, Lan; Russo, Salvy P; Dorna Esrafilzadeh; McConville, Chris F; Kalantar-Zadeh, Kourosh; Daeneke, Torben
Journal of the American Chemical Society, 01/2019, Letnik: 141, Številka: 1Journal Article
We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite GaN nanosheets featured typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm2 V–1 s–1, while the InN featured a thickness of 2.0 nm. The deposited nanosheets were highly crystalline, grew along the (001) direction and featured a thickness of only three unit cells. The method provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.
