Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

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Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

Chung, G; Cha, H.-Y; Kim, H

Electronics letters, 07/2018, Letnik: 54, Številka: 14

Journal Article

We fabricated Pt-functionalised hydrogen gas sensors on AlGaN/GaN heterojunction platform and investigated the influence of GaN-cap layer on the sensing characteristics. Pt-Schottky diodes with GaN-cap layer exhibited a larger change of Schottky barrier height than ones with no GaN-cap layer when hydrogen gas was detected. Technology computer-aided design simulation indicated that the increase of electron concentration at heterojunction can be magnified by a larger change of barrier height. The AlGaN/GaN FET-type sensors with Pt catalyst on the gate area demonstrated significant enhancement of hydrogen gas sensitivity from 16 to 35% at 200°C when GaN cap layer was employed.

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Chung, G | Cha, H.-Y | Kim, H

Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.

Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

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