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Vilalta-Clemente, A.; Mutta, G. R.; Chauvat, M. P.; Morales, M.; Doualan, J. L.; Ruterana, P.; Grandal, J.; Sánchez-García, M. A.; Calle, F.; Valcheva, E.; Kirilov, K.
Physica status solidi. A, Applications and materials science, 20/May , Letnik: 207, Številka: 5Journal Article, Conference Proceeding
An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility.
