The engineered interfaces of complex oxides have abundant physical properties and provide a powerful platform for the exploration of fundamental physics and emergent phenomena. In particular, research on the two-dimensional magnetic systems with high mobility remains a long-standing challenge for the discovery of quantum phase and spintronic applications. Here, we introduce a few atomic layers of the delta doping layer at LaAlO3/SrTiO3 interfaces through elaborately controllable epitaxial growth of SrRuO3. After inserting a SrRuO3 buffer layer, the interfaces exhibit a well-defined anomalous Hall effect up to 100 K and their mobility is enhanced by 3 orders of magnitude at low temperatures. More intriguingly, a large unsaturated positive magnetoresistance is created at interfaces. Combining with the density functional theory calculation, we attribute our findings to the electron transfer at interfaces and the magnetic moment of Ru4+ 4d bands. The results pave a way for further research of two-dimensional ferromagnetism and quantum transport in all-oxide systems.