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Tǎbǎcaru, G.; Borderie, B.; Ouatizerga, A.; Pârlog, M.; Rivet, M.F.; Auger, G.; Bacri, Ch.O.; Bocage, F.; Bougault, R.; Brou, R.; Buchet, Ph; Charvet, J.L.; Chbihi, A.; Colin, J.; Cussol, D.; Dayras, R.; Demeyer, A.; Doré, D.; Durand, D.; Ecomard, P.; Frankland, J.D.; Galichet, E.; Genouin-Duhamel, E.; Gerlic, E.; Guinet, D.; Lautesse, P.; Laville, J.L.; Fèvre, A.Le; Lefort, T.; Legrain, R.; Neindre, N.Le; Lopez, O.; Louvel, M.; Nalpas, L.; Nguyen, A.D.; Plagnol, E.; Rosato, E.; Saint-Laurent, F.; Salou, S.; Squalli, M.; Steckmeyer, J.C.; Stern, M.; Tassan-Got, L.; Tirel, O.; Vient, E.; Volant, C.; Wieleczko, J.P.
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1999, Letnik: 428, Številka: 2Journal Article
The pulse-height defect (PHD) of 36Ar, 58Ni, 129Xe, 181Ta and 197Au ions in the 180 passivated ion-implanted silicon detectors of the INDRA array has been measured. The detectors faced the target with the low electric field side. The charge encoding ensured a low ballistic deficit. Detectors with the same nominal characteristics and electric field strength show a PHD dependence on the individual silicon wafer. They are classified and calibrated by using an empirical parametrization which relates the PHD to the total energy through a Z-depending power law. A PHD analytical formula, based on a simple recombination model, is also proposed. It considers a realistic charge density variation with the position coordinate on the ion path. This new formula is successfully confronted to some experimental data.
