Tin‐based perovskites have long remained a side topic in current perovskite optoelectronic research. With the recent efficiency improvement in thin film solar cells and the observation of a long hot carrier cooling time in formamidinium tin iodide (FASnI3), a thorough understanding of the material's photophysics becomes a pressing matter. Since pronounced background doping can easily obscure the actual material properties, it is of paramount importance to understand how different processing conditions affect the observed behavior. Using photoluminescence spectroscopy, thin films of FASnI3 fabricated through different protocols are therefore investigated. It is shown that hot carrier relaxation occurs much faster in highly p‐doped films due to carrier–carrier scattering. From high quality thin films, the longitudinal optical phonon energy and the electron–phonon coupling constant are extracted, which are fundamental to understanding carrier cooling. Importantly, high quality films allow for the observation of a previously unreported state of microsecond lifetime at lower energy in FASnI3, that has important consequences for the discussion of long lived emission in the field of metal halide perovskites. Formamidinium tin iodide (FASnI3) thin films of different quality exhibit drastically different photophysics. Strongly increased carrier scattering and recombination causes hot carriers to cool down quickly in samples of poor quality. The low temperature crystal phase of FASnI3 possesses a long‐lived emitting state with an energy smaller than the main emission.