Bias‐stress stability is essential to the practical applications of organic field‐effect transistors (OFETs), yet it remains a challenge issue in conventional planar OFETs. Here, the feasibility of achieving high bias‐stress stability in vertical structured OFETs (VOFETs) in combination with doping techniques is demonstrated. VOFETs with silver nanowires as source electrodes are fabricated and the device performance is optimized by understanding the influence of device parameters on performance. Then, the bias‐stress stability of the optimized PDVT‐10 VOFETs is investigated and found to be superior to the corresponding planar OFETs, which is attributed to reduced trapping effects of gate dielectrics in the VOFETs. Moreover, the bias‐stress stability can be further improved by doping PDVT‐10 to passivate bulk traps. Consequently, the characteristic time of doped PDVT‐10 VOFETs extracted from stretched exponential equation is found to be over four times larger than that of the planar PDVT‐10 OFETs under the same bias‐stress conditions. These results present the promising applications of VOFETs as well as an effective strategy to achieve highly bias‐stress stable OFETs. Vertical organic field‐effect transistors (VOFETs) are shown to possess superior bias‐stress stability (BSS) than planar OFETs counterparts due to the special operation mechanism of them, and doping organic semiconductor layers in VOFETs to passivate bulk traps can further enhance BSS. The work presents an effective strategy to achieve highly bias‐stress stable OFETs.