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Berghoff, G.; Bergeault, E.; Huyart, B.; Jallet, L.
IEEE transactions on microwave theory and techniques, 12/1998, Letnik: 46, Številka: 12Journal Article
An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at f/sub 0/ and 2f/sub 0/ (multiharmonic load-pull) and variation of the source impedance at the input port at f/sub 0/ (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at f/sub 0/=2 GHz.
