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Gallrapp, C.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Pernegger, H.; Richter, R.H.; Weigell, P.
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 07/2012, Letnik: 679Journal Article
The performance of novel n-in-p planar pixel detectors designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS read-out chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5×1015 1MeVneqcm−2. Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6±0.3)% and a high collected charge of about 10ke for a device irradiated at the maximum fluence and biased at 1kV.
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Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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