SiPM operation at cryogenic temperatures fails for many common devices. A particular type from Zecotek with deep channels in the silicon substrate instead of quenching resistors was tested at liquid helium temperature. Two similar types were thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating them with low light levels. At cryogenic temperatures the SiPMs show an unchanged rise-time and a fast recovery time, practically no after-pulses, and exhibit no increased cross-talk probability. Charge collection spectra were measured to extract the pixel gain and its variation, both comparable to room temperature at the same over-voltage. The quenching resistance was decreased at cryogenic temperature. It was found possible to use the characterized devices at temperatures of 1–4K for the read-out of a target at the Mainz Microtron in Germany.