E-viri
Recenzirano
-
Ayres, V.M.; Jacobs, B.W.; Englund, M.E.; Carey, E.H.; Crimp, M.A.; Ronningen, R.M.; Zeller, A.F.; Halpern, J.B.; He, M.-Q.; Harris, G.L.; Liu, D.; Shaw, H.C.; Petkov, M.P.
Diamond and related materials, 04/2006, Letnik: 15, Številka: 4Journal Article, Conference Proceeding
Results of a first investigation of the response of gallium nitride nanowires to high-Z heavy ion irradiation are reported. Pre-irradiation characterization of the gallium nitride nanowires used in these experiments showed that that they had a two-phase coaxial structure, consisting of an outer shell of zinc–blende-phase gallium nitride and a coaxial core of wurtzite-phase gallium nitride. Observed radiation interactions with the two-phase structure are reported. A nanowire-based field effect transistor using these GaN nanowires showed normal real-time operation during irradiation by Krypton-78 heavy ions under high bias conditions.
