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Lee, H; Campbell, N; Lee, J; Asel, T J; Paudel, T R; Zhou, H; Lee, J W; Noesges, B; Seo, J; Park, B; Brillson, L J; Oh, S H; Tsymbal, E Y; Rzchowski, M S; Eom, C B
Nature materials, 03/2018, Letnik: 17, Številka: 3Journal Article
The discovery of a two-dimensional electron gas (2DEG) at the LaAlO /SrTiO interface has resulted in the observation of many properties not present in conventional semiconductor heterostructures, and so become a focal point for device applications . Its counterpart, the two-dimensional hole gas (2DHG), is expected to complement the 2DEG. However, although the 2DEG has been widely observed , the 2DHG has proved elusive. Herein we demonstrate a highly mobile 2DHG in epitaxially grown SrTiO /LaAlO /SrTiO heterostructures. Using electrical transport measurements and in-line electron holography, we provide direct evidence of a 2DHG that coexists with a 2DEG at complementary heterointerfaces in the same structure. First-principles calculations, coherent Bragg rod analysis and depth-resolved cathodoluminescence spectroscopy consistently support our finding that to eliminate ionic point defects is key to realizing a 2DHG. The coexistence of a 2DEG and a 2DHG in a single oxide heterostructure provides a platform for the exciting physics of confined electron-hole systems and for developing applications.
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