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Oshima, Takayoshi; Imura, Masataka; Oshima, Yuichi
Applied physics express, 08/2024, Letnik: 17, Številka: 8Journal Article
Abstract GaN mesas were fabricated by sequential dry and wet etching of a + c -oriented GaN layer onto a lattice-matched AlInN layer for future applications of positive beveled edge termination, which is desirable for preventing premature breakdown of power devices. The dry etching produced hexagonal AlInN/GaN mesas surrounded by m -plane sidewalls with six protrusions at the vertices. The subsequent hot phosphoric acid etching selectively etched the AlInN layer to expose and etch the chemically unstable − c surface of the GaN layer, which formed reverse-tapered { 10 1 ¯ 2 ¯ } facets. The protrusions were sacrificed during the wet etching to prevent undesirable positive tapering at the vertices.
