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Pantel, R; Wehbe-Alause, H; Jullian, S; Kwakman, L.F.Tz
Microelectronic engineering, 10/2002, Letnik: 64, Številka: 1Journal Article, Conference Proceeding
In this communication, we used a modern analytical TEM–STEM fully equipped to carry out a complete physical and chemical study of Al/Ti/W/TiN interconnection evolution after 450 °C annealing. Using energy filtered TEM, compositional mapping, scanning TEM (STEM) Z contrast imaging, EDX and EELS spectrum imaging and micro-diffraction, we evidence at the Al/W top contacts interface a reaction between Al and W leading to the growth of Al x W inclusions inside the Al grains.
