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Chen, Jhih-Wei; Lo, Shun-Tsung; Ho, Sheng-Chin; Wong, Sheng-Shong; Vu, Thi-Hai-Yen; Zhang, Xin-Quan; Liu, Yi-De; Chiou, Yu-You; Chen, Yu-Xun; Yang, Jan-Chi; Chen, Yi-Chun; Chu, Ying-Hao; Lee, Yi-Hsien; Chung, Chung-Jen; Chen, Tse-Ming; Chen, Chia-Hao; Wu, Chung-Lin
Nature communications, 08/2018, Letnik: 9, Številka: 1Journal Article
Abstract Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe 2 pn homojunction on the supporting ferroelectric BiFeO 3 substrate. This non-volatile WSe 2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe 2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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