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Characterization of chemical interdiffusivities at silicon/metal interfaces in initial reaction stages
Zalar, Anton ; Hofmann, S. ; Panjan, Peter, 1957-
In order to study the reactivity of Si/Me interfaces, seven model thin-film systems with Me=Al, Ni, Co, Cr, Zr, Mo or W and with a total thickness between 110 nm and 200 nm were prepared by sputter ...deposition on smooth Si(111) substrates. The samples were heated using a linear temperature increase between room temperataure and different higher temperatures (from 150°C to 950°C). The AES sputter depth profiles of as-deposited and heat treated samples allowed a quantitative determination of the change of the interface widths with temperature. The main moving elements in initial reaction stages and the effective chemical interdiffusivities at the Si/Me interfaces were determined by the rate of change of the interface widths. The activation energies for the beginning interfacial reactions at different Si/Meinterfaces were obtained from Arrhenius plots and were found to be between 0.6 eV and 2.1 eV.
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