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  • Thermal stability of metal/oxide interfaces in thin-film structures studied with AES depth profiling
    Zalar, Anton ; Hofmann, S. ; Panjan, Peter, 1957-
    Thermal stability of metal/oxide (Me/Oxide) interfaces is one of the most important characteristics of multilayer structures which are frequently used as wear, heat or corrosion resistant coatings or ... in microelectronics devices. Three different layers of a Me/Oxide structure, where Me= Ni, Cr or Ti and Oxide= NiO, ▫$Cr_2O_3$▫ or ▫$Al_2O_3$▫, were sputter deposited on smooth silicon (111) substrates, covered with a TiN thin-film diffusion barrier. To activate the reaction of the metal with the oxide layer, the samples were dinamically heated in a differential scanning calorimeter (DSC) or in a special tube furnace, at a linear heating rate of 40°C/min, between room temperature and different higher temperatures (300°C to 800°C). Interdiffusion at three different types of Me/Oxide interfaces is studied using the rate of change of the interface width obtained from AES sputter depth profiles of heattreated samples. The beginning of interdiffusion was observed at about 425°C for both the Cr/NiO and Ti/▫$Al_2O_3$▫ interfaces while the Ni/▫$Cr_2O_3$▫ interface showed a high thermal stability up to the highest measured temperature of 800°C. Quantification of concentration profiles at the interfaces allows to determine the main moving element in the early stage of the reaction: it is Cr at the Cr/NiO interface and O (followed by Al) at the Ti/▫$Al_2O_3$▫ interface. The activation energy for the beginning interfacial reaction at the Cr/NiO and Ti/▫$Al_2O_3$▫ interfaces was obtained from Arrhenius plots of its temperature dependence.
    Source: ECASIA 97 (Str. 431-434)
    Type of material - conference contribution
    Publish date - 1997
    Language - english
    COBISS.SI-ID - 12914215

source: ECASIA 97 (Str. 431-434)
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