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Characterization of NiAl layers formed with 350 KeV Ar[sup]+ ion mixing of Ni/Al multilayer structures
Zalar, Anton ...
Thin-film intermetallic aluminide compounds are used as heat-and corrosion-resistant coatings and as interconnects in microelectronics. Two different multilayer structures composes of the alternating ...Ni and Al thin films were sputter deposited on smooth Si(111) substrates: (a) the multilayer with an average composition of ▫$Ni_{0,50}Al_{0,50}$▫ with a total thickness of 315 nm and individual thicknesses of Ni and Al thin films of about 25 nm and 38 nm, respectively and (b) the multilayer with an average composition of ▫$Ni_{0,75}Al_{0,25}$▫ with a total thickness of 190 nm and individual thicknesses of Ni and Al thin films of about 25 nm and 13 nm, respectively. The Ni/Al samples were ion mixed at ambient temperature with 350 keV ▫$Ar^+$▫ under the doses of ▫$5x10^{15}$▫, ▫$1x10^{16}$▫ and ▫$3x10^{16}$▫ ions ▫$cm^{-2}$▫, respectively. As deposited and with ion mixing formed NiAl layer swere characterized with AES sputter depth profiling and XRD. X-ray diffraction measurements of the ▫$Ni_{0,50}Al_{0,50}$▫ sample ion mixed with ▫$3x10^{16} Ar^+ ions cm^{-2}$▫ show the formation of ▫$Ni_2Al_3$▫ and in the ▫$Ni_{0,75}Al_{0,25}$▫ sample ion mixed with ▫$1x10^{16} Ar^+ ions cm^{-2}$▫ the ▫$Ni_3Al$▫ phase was found. The results are in agreement with phases obtained in the same Ni/Al multilayer structures which were dynamically heated up to 550°C.
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