-
Silicon crystallinity control during laser direct microstructuring with bursts of picosecond pulsesMur, Jaka ...Laser ablation and modification using bursts of picosecond pulses and a tightly focused laser beam are used to manufacture structures in the bulk silicon. We demonstrate precise control of the ... surface crystallinity as well as the structure depth and topography of the processed areas, achieving homogeneous surface properties. The control is achieved with a combination of a well -defined pulse energy, systematic pulse positioning on the material, and the number of pulses in a burst. A custom designed fiber laser source is used to generate bursts of 1, 5, 10, and 20 pulses at a pulse repetition rate of 40 MHz and burst repetition rate of 83.3 kHz allowing for a fast and stable processing of silicon. We show a controlled transition through different laser -matter interaction regimes, from no observable changes of the silicon at low pulse energies, through amorphization below the ablation threshold energy, to the ablation with either complete, partial or nonexistent amorphization. Single micrometer - sized areas of desired shape and crystallinity were defin ed on the silicon surface with submicron precision, offering a promising tool for applications in thAbstract: Laser ablation and modification using bursts of picosecond pulses and a tightly focused laser beam are used to manufacture structures in the bulk silicon. We demonstrate precise control of the surface crystallinity as well as the structure depth and topography of the processed areas, achieving homogeneous surface properties. The control is achieved with a combination of a well -defined pulse energy, systematic pulse positioning on the material, and the number of pulses in a burst. A custom designed fiber laser source is used to generate bursts of 1, 5, 10, and 20 pulses at a pulse repetition rate of 40 MHz and burst repetition rate of 83.3 kHz allowing for a fast and stable processing of silicon. We show a controlled transition through different laser -matter interaction regimes, from no observable changes of the silicon at low pulse energies, through amorphization below the ablation threshold energy, to the ablation with either complete, partial or nonexistent amorphization. Single micrometer - sized areas of desired shape and crystallinity were defin ed on the silicon surface with submicron precision, offering a promising tool for applications in the field of optics.Source: Optics express [Elektronski vir]. - ISSN 1094-4087 (Vol. 25, nr. 21, Oct. 2017, str. 26356-26364)Type of material - article, component partPublish date - 2017Language - englishCOBISS.SI-ID - 15709467
Author
Mur, Jaka |
Pirker, Luka |
Osterman, Natan |
Petkovšek, Rok, fizik
Topics
silicon |
crystallinity |
light-matter interaction |
laser processing |
direct laser microstructuring |
bursts of pulses |
picosecond pulses |
silicij |
kristaliničnost |
interakcija svetloba-snov |
laserska obdelava |
direktno lasersko mikrostrukturiranje |
paketi pulzov |
pikosekundni pulzi
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|---|
Mur, Jaka | 37953 |
Pirker, Luka | 38194 |
Osterman, Natan | 25669 |
Petkovšek, Rok, fizik | 15646 |
Select pickup location:
Material pickup by post
Notification
Subject headings in COBISS General List of Subject Headings
Select pickup location
Pickup location | Material status | Reservation |
---|
Please wait a moment.