-
Robust ▫$SrTiO_3$▫ passivation of silicon photocathode by reduced graphene oxide for solar water splittingHo, Hsin-Chia ...Development of a robust photocathode using low-cost and high-performing materials, e.g., p-Si, to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily ... susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). Specifically, a very thin (3.9 nm ∼10 unit cells) STO layer epitaxially overgrown on rGO-buffered Si showed the highest onset potential (0.326 V vs RHE) in comparison to the counterparts with thicker and/or nonepitaxial STO. The photovoltage, flat-band potential, and electrochemical impedance spectroscopy measurements revealed that the epitaxial photocathode was more beneficial for charge separation, charge transfer, and targeted redox reaction than the nonepitaxial one. The STO/rGO/Si with a smooth and highly epitaxial STO layer outperforming the directly contacted STO/Si with a textured and polycrystalline STO layer showed the importance of having a well-defined passivation layer. In addition, the numerous pinholes formed in the directly contacted STO/Si led to the rapid degradation of the photocathode during the PEC measurements. The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.Source: ACS applied materials & interfaces [Elektronski vir]. - ISSN 1944-8252 (Vol. 15, iss. 37, Sep. 2023, str. 44482-44492)Type of material - e-article ; adult, seriousPublish date - 2023Language - englishCOBISS.SI-ID - 164408835
Author
Ho, Hsin-Chia |
Smiljanić, Milutin |
Jovanović, Zoran M., kemik |
Čekada, Miha |
Kovač, Janez, 1965- |
Koster, Gertjan |
Hlinka, Jiři |
Hodnik, Nejc, dipl. kemik |
Spreitzer, Matjaž, 1979-
Topics
fotoelektrokemična cepitev vode |
pulsed laser deposition |
epitaxy |
reduced graphene oxide |
protection layer |
photoelectrochemical water splitting |
onset potential |
stability
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|---|
Ho, Hsin-Chia | 55610 |
Smiljanić, Milutin | 53024 |
Jovanović, Zoran M., kemik | 51077 |
Čekada, Miha | 18271 |
Kovač, Janez, 1965- | 15703 |
Koster, Gertjan | 51440 |
Hlinka, Jiři | ![]() |
Hodnik, Nejc, dipl. kemik | 30470 |
Spreitzer, Matjaž, 1979- | 24273 |
Select pickup location:
Material pickup by post
Notification
Subject headings in COBISS General List of Subject Headings
Select pickup location
Pickup location | Material status | Reservation |
---|
Please wait a moment.