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Interfacial reactions in In-SnTe and In-PbTe thin film couples
Mandrino, Djordje ; Marinković, Velibor ; Prodan, Albert
Transmission electron microscopy and diffraction have been used to study the interdiffusion and phase formation in thin In/SnTe (or PbTe) couples and their dependence on deposition parameters and ...postdeposition treatments. 30 nm thick SnTe or PbTe films were prepared by vacuum deposition onto (001) cleavage faces of KCL crystals at about 0.5 mPa. These films were deposited at temperatures (T[sub]1) between 25°C and 100°C so that unoriented as well as epitaxial films were obtained. Deposition of indium, nominally 6-50 nm thick (d[sub]In) followed in the same evaporation cycle at temperature (T[sub]2) between 25°C and 200°C. In some cases a part of the KCl surface was covered by shutter during the SnTe of PbTe deposition, so that indium deposits on the chalcogenide layer could be compared with ones on KCl. All indium deposits were found to be discontinuous. The surface coverages were rather high and they depend, as well as the size and shape of the crystallites on deposition parameters (T[sub]1, T[sub]2. d[sub]In). In thin film couples various diffraction patterns of rataher high complexity were observed. Apart from In[sub]2O[sub]3 due to partial oxidation of In [L. Eyring, Ultramicroscopy 18(1985)253], inSn[sub]4 and several In-Te phases in different orientational relationship - depending on deposition conditions - were identified.
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