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A TEM study of interfacial reactions in In-SnTe (or PbTe) thin film couples
Mandrino, Djordje ; Marinković, Velibor ; Prodan, Albert
Transmission electron microscopy and diffraction have been used to study the interdiffusion and phase formation in thin In/SnTe (or PbTe) couples and their dependence on deposition parameters and ...post deposition treatments. 30 nm thick SnTe or PbTe films were prepared by vacuum deposition onto (001) cleavage faces of KCl crystalls at about 0.5 mPa. This films were deposited at temperatures (T[sub]1) between 25°C and 100°C so that unoriented as well as epitaxial films were obtained. Deposition of indium, nominally 6-50 nm thick (d[sub]In) followed in the same evaporation cycle at temperatures (T[sub]2) between 25°C and 200°C. In some cases a part of the KCl surface was covered by a shutter during the SnTe or a PbTe deposition, so that indium deposits on the chalcogenide layer could be compared with ones on KCl. All indium deposits were found to be discontinuous. The surface coverages were rather high and they depend, as well as the size and shape of the crystallites on deposition parameters (T[sub]1, T[sub]2, d[sub]In). In thin film couples various diffraction patterns of rather high complexity were observed. Aparat from In[sub]2O[sub]3 due to partial oxidation of the layers during their deposition, InSn[sub]4 and several In-Te phases depending on deposition conditions in different orientation relationships, have been identified.
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