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Characterization of multilayer structures with titanium nitride and titanium silicide
Panjan, Peter, 1957- ...
Three different contact schemes , namely Ti-Si, ▫$TiN_{0.7}$▫-Si and TiN/Ti-Si, were prepared by sputter deposition. The reactions of Ti, TiN/Ti and ▫$TiN_{0.7}$▫ films with silicon wafers (100) ...during vacuum annealing were studied by X-ray diffraction, Auger sputter depth profiling and cross-sectional transmission electron microscopy. The sheet resistance variation of the films was measured for a range of annealing temperatures from 773 to 1123 K. A CMOS test chip was fabricated and contact resistance and leakage current were measured in small ▫$n^+$▫p diodes.
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