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CMOS testno vezje z Al/TiN/▫$TiSi_2$▫-Si metalizacijsko strukturo
Panjan, Peter, 1957- ...
V prispevku je opisana metoda priprave in karakterizacije metalizacijske strukture Al/TiN/▫$TiSi_2$▫-Si, ki smo jo dobili z nanosom TiN/Ti ali ▫$TiN_{0.7}$▫ plasti na silicij in vakuumskim ...pregrevanjem na 1023 K. Titan silicidne plasti so imele specifično upornost med 18 in 25 ▫$\mu$▫Ohmcm. Strukturo in sestavo smo analizirali z rentgenom za tanke plasti, transmisijsko elektronsko mikroskopijo in Augerjevim spektrometrom. Izdelano je bilo CMOS testno vezje, na katerem smo izmerili kontatktno upornost in tok pušanja na majhnih ▫$n^+p^-$▫ diodah.
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