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On the origin of a possible disorder induced charge transport in ICB Schottky structures for nonzero acceleration voltage
Korošak, Dean ; Cvikl, Bruno ; Koželj, Matjaž, 1955-
The investigation of the possible additional charge transport induced by the presence of the disordered interfacial control layer (DICL) in Schottky structures deposited by the ICB method is ...presented. It is argued that due to the existence of the continuum of disorder induced gap states (DIGS) at DICL/ordered semiconductor interface a tunneling current through the semiconductor band gap can be present. The treatment of such a charge transport is given in the first approximation revealing the role of the key physical properties of the DICL, i.e. the DIGS density states, localization length and the metal penetration length, on the conduction through the band gap. The analysis of the measured current-voltage characteristics is further refined introducing the presumed additional tunneling into the sum of the charge transport mechanisms. In this manner calculated current-voltage characteristic offers possible explanation of the particularities in the reverse part of the current voltage characteristic.
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