Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

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Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Wang, Yaqi ...

Source: Semiconductor science and technology. - ISSN 0268-1242 (Vol. 26, no. 2, 2011, str. 022002-1-022002-4)

Type of material - article, component part

Publish date - 2011

Language - english

COBISS.SI-ID - 4635131

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Repository of University of Nova Gorica - RUNG
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Topics
free-standing GaN substrate | ultra-low leakage | high breakdown Schottky diodes

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source: Semiconductor science and technology. - ISSN 0268-1242 (Vol. 26, no. 2, 2011, str. 022002-1-022002-4)

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Year	Impact factor		Edition		Category		Classification
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Links to authors' personal bibliographies	Links to information on researchers in the SICRIS system
Wang, Yaqi
Alur, Siddharth
Sharma, Yogesh
Tong, Fei	37421
Thapa, Resham
Gartland, Patrick
Issacs-Smith, Tamara
Ahyi, Ayayi Claude
Williams, John, fizik
Park, Minseo
Johnson, Mark, fizik
Paskova, Tanya
Preble, Edward A.
Evans, Keith R.

Source: Personal bibliographies and: SICRIS

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