ALL libraries (COBIB.SI union bibliographic/catalogue database)
13.
AlAs-GaAs heterojunction engineering by means of group-IV elemental interface layers
Bratina, Gvido ...
Valence- and conduction-band discontinuities in AlAs-GaAs heterostructures can be continuously tuned through fabrication of pseudomorphic elemental Ge or Si layers of controlled thickness at the ...interface. The local interface dipole associated with the group-IV interface layer can be added to or subtracted from the natural band offsets depending on the growth sequence. Comparison of high resolution x-ray-photoemission studies of AlAs-Ge-GaAs and AlAs-Si-GaAs heterostructures prepared in situ by molecular-beam epitaxy as a function of the interface concentration of group-IV elements shows qualitative similarities and surprising quantitative differences. The observed dipole per group-IV atom is 3 times as large for Ge as for Si, but the total maximum dipole achievable at the interface is identical (0.4 eV), within experimental uncertainty, for the two group-IV elements.
It was not necessary to add the material to the shelf.
Bibliographic material was successfully added on shelf.
Adding bibliographical material on shelf was not successful.
Material is already on the shelf.
Permalink
URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year
Impact factor
Edition
Category
Classification
JCR
SNIP
JCR
SNIP
JCR
SNIP
JCR
SNIP
Select the library membership card:
DRS,
in which the journal is indexed
Database name
Field
Year
Links to authors' personal bibliographies
Links to information on researchers in the SICRIS system
Subject headings in COBISS General List of Subject Headings
Select pickup location
The material from the parent unit is free. If the material is delivered to the pickup location from another unit, the library may charge you for this service.
