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A novel facility for MBE growth and in-situ high resolution XPS characterization of III-V and II-VI semiconductor heterostructures
Bratina, Gvido ...
We describe a facility recently established at the TASC Laboratory in Trieste,Italy. The facility includes two molecular beam epitaxy chambers for the growth of III-V and II-VI semiconductors. The ...growth chambers are directly connected with an analysis chamber equipped with a monochromatic small-spot XPS spectrometer. We present preliminary studies of AlAs-GaAs(001) heterojunctions, which demostrate the potential of this facility for in-situ high resolution investigations of semiconductor heterostructures.
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