Central Technological Library of the University of Ljubljana (CTK)
  • Activation of the ▫$Na_2KSb$▫ photocathode with Cs and ▫$O_2$▫ at lowered temperatures
    Erjavec, Bojan
    Several attempts to activate the ▫$Na_2KSb$▫ photocathode with Cs and ▫$O_2$▫ at RT failed due to the growth of a thick intermediate oxide layer, consisting of Sb, na and K oxides, and thus to the ... formation of a highly alkali-deficient ▫$Na+2KSb$▫ base layer. The spectral sensitivities in the near IR region were very low because these defects had contributed to a reduced escape depth of excited electrons and an increased photoelectric threshold energy. A novel activation at 140 K has therefore been performed in order to promote the adsorption of Cs and to prevent the harmful diffusion of O into the near-surface region of the ▫$Na_2KSb$▫ and the strong diffusion of K from the interior of the ▫$Na_2KSb$▫ towards its surface. During cooling-down from RT to 140 K, the photosensitivity of the ▫$Na_2KSb$▫ dropped to oabout one third of the initial value measured at RT, due to an increase in the electrical resistivity of the ▫$Na_2KSb$▫, thus causing a space charge to arise, which attenuated photoemission. The ▫$Cs-O_2$▫ cycles resulted in a relatively high photosensitivity of ▫$250 \mu A/lm$▫, if its initial drop is taken into account. During heating to RT, the photosensitivity first increased to ▫$370 \mu A/lm$▫ at about 210 K, and then, in the range between 210 K and RT, it unexpectedly decreased from 370 to ▫$100 \mu A/lm$▫. This behaviour was attributed to defects which caused the build-up of a surface potential barrier, such as the reduction of Cs (sub)ocides, which was enabled by the enhanced diffusion of K from the interior of the ▫$Na_2KSb$▫ into the deposited Cs,O surface film at temperature above 210 K.
    Source: Applied Surface Science. - ISSN 0169-4332 (103, 1996, str. 343-349)
    Type of material - article, component part
    Publish date - 1996
    Language - english
    COBISS.SI-ID - 18139909

source: Applied Surface Science. - ISSN 0169-4332 (103, 1996, str. 343-349)

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