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  • Slow relaxation of magnetoresistance in doped p-GaAs/AlGaAs layers with partially filled upper Hubbard band [Elektronski vir]
    Agrinskaya, N.V. ...
    We observed slow relaxation of magnetoresistance in quantum well structures GaAs–AlGaAs with a selective doping of both wells and barrier regions which allowed partial filling of the upper Hubbard ... band. Such a behavior is explained as related to magnetic-field driven redistribution of the carriers between sites with different occupation numbers due to spin correlation on the doubly occupied centers. This redistribution, in its turn, leads to slow multi-particle relaxations in the Coulomb glass formed by the charged centers.
    Vir: Solid state communications [Elektronski vir]. - ISSN 1879-2766 (Vol. 149, iss. 13/14, Apr. 2009, str. 576-579)
    Vrsta gradiva - e-članek ; neleposlovje za odrasle
    Leto - 2009
    Jezik - angleški
    COBISS.SI-ID - 147246851

    Povezava(-e):

    https://www.sciencedirect.com/science/article/pii/S0038109808006200?via%3Dihub
    DOI

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