VSE knjižnice (vzajemna bibliografsko-kataložna baza podatkov COBIB.SI)
  • Quantitative evaluation of contributions to interface broadening in metal/silicon multilayers
    Kovač, Janez, 1965- ; Zalar, Anton
    Auger electron spectroscopy (AES) depth profiling is a widely used technique to study buried interfaces in thin-film structures. It involves a sputtering process that may cause topographical and ... compositional changes in the surface region of the ion bombarded sample. In order to reveal the original in-depth elemental distribution, it is important to know the influence of the sputtering process. AES depth profiling of Si/Ti, Si/Ni, Si/Nb and Si/W layered structures was performed with 1 and 3 keV Ar ions at an incidence angle of 47o. The mixing-roughness-information depth (MRI) model was used to estimate different contributions to the interface broadening. A stronger broadening of the metal/silicon interfaces than that of the silicon/metal interfaces can be explained by ion bombardment induced roughening and mixing of metallic atoms with the silicon ones.
    Vir: Surface and interface analysis. - ISSN 0142-2421 (Vol. 36, 2004, str. 841-844)
    Vrsta gradiva - članek, sestavni del
    Leto - 2004
    Jezik - angleški
    COBISS.SI-ID - 18781223

Vnos na polico