VSE knjižnice (vzajemna bibliografsko-kataložna baza podatkov COBIB.SI)
  • Self-controlled diffusion of Al in Cu thin film
    Mozetič, Miran, 1961- ; Zalar, Anton ; Drobnič, Matija
    A layer of copper with the thickness of 0,5▫$\mu$▫m was sputter deposited on well polished aluminum substrates. The samples were exposed to a low pressure weakly ionized RF hydrogen plasma at ... different conditions. A layer of copper aluminide was formed on the sample at the temperature of approximately 250°C. The formation of aluminide was confirmed with the AES depth profile. The time necessary for formation of the coating dependent on the sample temperature. Atthe maximum temperature of 250°C it was three minutes, while at 320°C it was 50 s. Whwn the aluminium atoms reached the surface, the temperature of samples began to fall thus decreasing further diffusion of Al. This was explained in the terms of the change of the recombination coefficient for the reaction H+H ▫$\to$▫ ▫$H_2$▫. As the temperature of the samples fell as soon as the formation of the coating was accomplished, the possibility of self controlled formation of the thin copper aluminide coatings is suggested.
    Vir: Vacuum. - ISSN 0042-207X (Vol. 50, no. 1-2, May/June 1998, str. 1-3)
    Vrsta gradiva - članek, sestavni del
    Leto - 1998
    Jezik - angleški
    COBISS.SI-ID - 24546

vir: Vacuum. - ISSN 0042-207X (Vol. 50, no. 1-2, May/June 1998, str. 1-3)
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