VSE knjižnice (vzajemna bibliografsko-kataložna baza podatkov COBIB.SI)
  • Surface composition changes in GaN induced by argon ion bombardment
    Kovač, Janez, 1965- ; Zalar, Anton
    The wide-band gap GaN semiconductor has been used to fabrica efficient blue-green light-emitting diodes, laser diodes and high-power/high-temperature electronic devices since the many problems ... regarding the life-time characteristics were resolved in recent years. Knowledge of ion-bombardment-induced surface composition changes is important in quantitative AES/XPS analysis. We investigated the dependance of preferential sputtering of components on ion enegies and on the angle of incidence of argon ions. Thin films of GaN prepared on a smooth Si substrate and GaN single crystals were bombarded with argon ions of energy 0,5-5 keV at incidence angles of 10-72° with respect to the surface normal. The N KLL and Ga LMM AES signals were acquired after steady-state surface composition was reached. The results show that nitrogen is sputtered preferentially. This effect is more pronounced for higher ion energies and smaller incidence angles. The experimental results are discussed in the framework of models of preferential sputtering and compared with computer simulations.
    Vir: Surface and interface analysis. - ISSN 0142-2421 (Vol. 34, No. 1, Aug. 2002, str. 253-256)
    Vrsta gradiva - članek, sestavni del ; neleposlovje za odrasle
    Leto - 2002
    Jezik - angleški
    COBISS.SI-ID - 66530

vir: Surface and interface analysis. - ISSN 0142-2421 (Vol. 34, No. 1, Aug. 2002, str. 253-256)
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