VSE knjižnice (vzajemna bibliografsko-kataložna baza podatkov COBIB.SI)
  • Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
    Sorba, L... ...
    The presence of thin ordered layers of Si within the interface region of AlAs-GaAs heterostructures is found to tune the valence-band offset throughout the 0.02-0.78 eV range. Highresolution ... x-ray-photoemission studies of heterostructures prepared in situ by molecular-beam epitaxy as a function of substrate temperature, arsenic flux, interface concentration of Si, and growth sequence (AlAs on GaAs versus GaAs on AlAs) indicate that this tunability is associated with a Si-related local dipole which can be added to or subtracted from the intrinsic AlAs-GaAs valence-band offset of 0.40 eV.
    Vir: Physical review. B, Condensed matter. - ISSN 0163-1829 (Vol. 43, no. 3, 1991, str. 2450-2453)
    Vrsta gradiva - članek, sestavni del ; neleposlovje za odrasle
    Leto - 1991
    Jezik - angleški
    COBISS.SI-ID - 87547

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