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  • The synthesis of Bi[sub](12)SiO[sub]20-based thin films by the sol-gel method
    Grafy, Asja ; Valant, Matjaž ; Suvorov, Danilo
    The phase formation and microstructural development of Bi[sub]12SiO[sub]20 thin films prepared on a sapphire substrate using the sol-gel method have been investigated. For the deposition of the thin ... films from the precursor solution we used the dip-coating method with a withdrawal speed of 15 cm/min. A homogeneous and stable solution was obtained from Bi(NO[sub]3)[sub]3.5H[sub]2O and Si(OC[sub]2H[sub]5([sub]4 (TEOS). The stability of the solution was determined by its concentration which directly affects the microstructure. The films were annealed in the temperature range from 300 [compositum]C to 700 [compositum]C. Single-phase Bi[sub]12SiO[sub]20 polycrystalline thin films were formed at a temperature between 600 [compositum]C and 700 [compositum]C. After drying and densification, these films were characterized using X-ray diffraction (XRD) and scanning electron microscopy.
    Vir: Materiali in tehnologije = Materials and technology. - ISSN 1580-2949 (Letn. 39, št. 1/2, jan.-apr. 2005, str. 25-28)
    Vrsta gradiva - članek, sestavni del
    Leto - 2005
    Jezik - angleški
    COBISS.SI-ID - 392106

vir: Materiali in tehnologije = Materials and technology. - ISSN 1580-2949 (Letn. 39, št. 1/2, jan.-apr. 2005, str. 25-28)

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