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  • Effect of the antimony thin-film deposition sequence on copper-silicon interdiffusion = Vpliv zaporedja nanosa tankih plasti antimona na interdifuzijo baker-silicij
    Nasser, Menni ...
    In this work we present a study of the effect of an antimony layer on the interdiffusion and formation of copper silicides while inverting the sequence of Cu and Sb deposition on Si(111) substrates. ... Thermal evaporation was used to deposit Cu/Sb and Sb/Cu bilayers on a Si(111) substrate heated at 100 °C, without breaking the vacuum. XRD and RBS analysis showed, for samples heat treated at 200 °C and 400 °C, a segregation of the three elements (i.e., Cu, Sb and Si) to the surface and diffusion in bulk ending in the formation of a layer made of a mixture containing the three elements at the samples' surface. After 200 °C annealing, in the Cu/Sb/Si system, we observed the formation of only Cu2Sb, and for the Sb/Cu/si system, there is the formation of the Cu3Si and Cu2Sb phases; after 400 °C annealing, the Cu-Sb-Si mixture is formed by the cohabitation of the Cu3Si silicide and the Cu2Sb intermetallic compound in the Cu/Sb/Si sample and only Cu2Sb in the Sb/Cu/Si sample. For the Cu/Sb/Si sample, annealed at 400 °C, the SEM micrographs exhibit compound formation with crystallites that have a trapezoidal shape.
    Vir: Materiali in tehnologije = Materials and technology. - ISSN 1580-2949 (Letn. 46, št. 2, mar.-apr. 2012, str. 139-144)
    Vrsta gradiva - članek, sestavni del
    Leto - 2012
    Jezik - angleški
    COBISS.SI-ID - 929962

    Povezava(-e):

    http://mit.imt.si/Revija/
    Digitalna knjižnica Slovenije - dLib.si

vir: Materiali in tehnologije = Materials and technology. - ISSN 1580-2949 (Letn. 46, št. 2, mar.-apr. 2012, str. 139-144)

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