Effective density of bias voltage dependent interfacial states of some non-intimate Schottky junctions and its possible relation to Wannier-Stark effect
Cvikl, Bruno ; Korošak, Dean
Recently we have shown that the external voltage dependent net charge density as induced at the appropriate interface Ag/Si and Pb/Si ionzed cluster beam deposited Schottky structures, as well as ...some in the literature published non-intimate Schottky junctions, appears to be primarily responsible for the occurrence of excess capacitance of the above metal/semiconductor contacts. In this work, this empirically verified bias dependent net charge interfacial density is used to deduce the effective density of interfacial states. It is shown that the derived effective density of states is, over the Si energy gap, characterised by bias dependent spikes of a thin but finite width. The amplitude of the spikes envelope is for forward biases exhibiting the standing wave like oscillations, with a number of nodes being strongly bias dependent. By increasing reverse bias the energy distribution of the spikes is becoming increasingly dense with the corresponding relaxation of the standing wave character of the spikes envelope. Based on the model of two coupled semiinfinitive linear chains of interacting atoms, using the method of recursive Green function technique involving the repeated use of the Dyson equation, the energy spectra, the wavefunction and the density of states of an electron in a crystal under the influence of an externally applied electric field is investigated. The results of calculations, when compared to the deduced effective density of states of the above matal /semiconductor structures, provide a strong support to the hypothesis that the measured excess capacitance of nonintimate Schottky structures may reflect an independent albeit an unexpedted experimental observation of the Wannier-Starkeffect in macroscopic samples.
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