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Cho, Chen-Yi; Chao, Tzu-Yi; Lin, Tzu-Yao; Wang, I-Ting; Chen, Yu-Sheng; Ong, Yi-Ching; Lin, Yu-De; Yeh, Po-Chun; Sheu, Shyh-Shyuan; Hou, Tuo-Hung
2023 International Electron Devices Meeting (IEDM), 2023-Dec.-9Conference Proceeding
The wake-up procedure that demands prolonged time and a high electric field poses a significant obstacle to the aggressive scaling of the ferroelectric (FE) Hf 0.5 Zr 0.5 O 2 (HZO) thickness. A comprehensive understanding of its origin is thus imperative. A new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), is proposed to elucidate the wakeup behavior in the ultrathin HZO capacitor. Compelling experimental evidence is presented to support the critical role of IL and its SBD. A multi-domain FE wake-up model is developed that incorporates defect generation, trap-assisted tunneling within the IL, and charge screening at the IL/HZO interface. Remarkably, this model accurately reproduces the trend of thickness-dependent wake-up behavior, emphasizing the utmost significance of IL optimization in ultrathin HZO.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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