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  • Selective-Area-Grown Semico...
    Vaitiekėnas, S; Whiticar, A M; Deng, M-T; Krizek, F; Sestoft, J E; Palmstrøm, C J; Marti-Sanchez, S; Arbiol, J; Krogstrup, P; Casparis, L; Marcus, C M

    Physical review letters, 2018-Oct-05, Letnik: 121, Številka: 14
    Journal Article

    We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length. Finally, we investigate a loop network, finding strong spin-orbit coupling and a coherence length of several microns. These results demonstrate the potential of this platform for scalable topological networks among other applications.