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Ledentsov, N N; Shchukin, V A; Shernyakov, Yu M; Kulagina, M M; Payusov, A S; Gordeev, N Yu; Maximov, M V; Zhukov, A E; Denneulin, T; Cherkashin, N
Optics express, 05/2018, Letnik: 26, Številka: 11Journal Article
We report room temperature injection lasing in the yellow-orange spectral range (599-605 nm) in (Al Ga ) In P-GaAs diodes with 4 layers of tensile-strained In Ga P quantum dot-like insertions. The wafers were grown by metal-organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7-10 kA/cm at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.
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