The ability to process and dimensionally scale field‐effect transistors with and on paper and to integrate them as a core component for low‐power‐consumption analog and digital circuits is ...demonstrated. Low‐temperature‐processed p‐ and n‐channel integrated oxide thin‐film transistors in the complementary metal oxide semiconductor (CMOS) inverter architecture are seamlessly layered on mechanically flexible, low‐cost, recyclable paper substrates. The possibility of building these circuits using low‐temperature processes opens the door to new applications ranging from smart labels and sensors on clothing and packaging to electronic displays printed on paper pages for use in newspapers, magazines, books, signs, and advertising billboards. Because the CMOS circuits reported constitute fundamental building blocks for analog and digital electronics, this development creates the potential to have flexible form factor computers seamlessly layered onto paper. The holistic approach of merging low‐power circuitry with a recyclable substrate is an important step towards greener electronics.
Cross‐sectional schematic of the complimentary inverter circuit with, and on paper with gallium‐indium‐zinc‐oxide (GIZO) as the n‐channel and SnOx as the p‐channel transistor. The use of thin semiconductor films leads to a mesh‐like channel layer, which gives the circuits unique electrical and mechanical properties.
Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the ...research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium–indium–zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec –1 and a turn-on voltage of −0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In2O3) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.
The current trend for smart, self-sustainable, and multifunctional technology demands for the development of energy harvesters based on widely available and environmentally friendly materials. In ...this context, ZnSnO3 nanostructures show promising potential because of their high polarization, which can be explored in piezoelectric devices. Nevertheless, a pure phase of ZnSnO3 is hard to achieve because of its metastability, and obtaining it in the form of nanowires is even more challenging. Although some groups have already reported the mixing of ZnSnO3 nanostructures with polydimethylsiloxane (PDMS) to produce a nanogenerator, the resultant polymeric film is usually flat and does not take advantage of an enhanced piezoelectric contribution achieved through its microstructuration. Herein, a microstructured composite of nanowires synthesized by a seed-layer free hydrothermal route mixed with PDMS (ZnSnO3@PDMS) is proposed to produce nanogenerators. PFM measurements show a clear enhancement of d 33 for single ZnSnO3 versus ZnO nanowires (23 ± 4 pm/V vs 9 ± 2 pm/V). The microstructuration introduced herein results in an enhancement of the piezoelectric effect of the ZnSnO3 nanowires, enabling nanogenerators with an output voltage, current, and instantaneous power density of 120 V, 13 μA, and 230 μW·cm–2, respectively. Even using an active area smaller than 1 cm2, the performance of this nanogenerator enables lighting up multiple LEDs and other small electronic devices, thus proving great potential for wearables and portable electronics.
Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered ...in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm–2 at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium–zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec–1 and mobility above 1.3 cm2 V–1 s–1.
During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with ...remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm 2 /V ldr s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as (intrinsic mobility) and VT i (intrinsic threshold voltage).
In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors (FETs). In ...this new approach, we are using the cellulose-fiber-based paper in an ldquointerstraterdquo structure since the device is built on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility,(> 30 cm 2 / vs drain-source current on/off modulation ratio of approximately 10 4 , near-zero threshold voltage, enhancement n-type operation, and subthreshold gate voltage swing of 0.8 V/decade. The cellulose-fiber-based paper FETs' characteristics have been measured in air ambient conditions and present good stability, after two months of being processed. The obtained results outpace those of amorphous Si thin-film transistors (TFTs) and rival with the same oxide-based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and low-cost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID, and point-of-care systems for self-analysis in bioapplications, among others.
Neuromorphic computation based on resistive switching devices represents a relevant hardware alternative for artificial deep neural networks. For the highest accuracies on pattern recognition tasks, ...an analog, linear, and symmetric synaptic weight is essential. Moreover, the resistive switching devices should be integrated with the supporting electronics, such as thin-film transistors (TFTs), to solve crosstalk issues on the crossbar arrays. Here, an a-Indium-gallium-zinc-oxide (IGZO) memristor is proposed, with Mo and Ti/Mo as bottom and top contacts, with forming-free analog switching ability for an upcoming integration on crossbar arrays with a-IGZO TFTs for neuromorphic hardware systems. The development of a TFT compatible fabrication process is accomplished, which results in an a-IGZO memristor with a high stability and low cycle-to-cycle variability. The synaptic behavior through potentiation and depression tests using an identical spiking scheme is presented, and the modulation of the plasticity characteristics by applying non-identical spiking schemes is also demonstrated. The pattern recognition accuracy, using MNIST handwritten digits dataset, reveals a maximum of 91.82% accuracy, which is a promising result for crossbar implementation. The results displayed here reveal the potential of Mo/a-IGZO/Ti/Mo memristors for neuromorphic hardware.
Extracellular microelectrodes have been widely used to measure brain activity, yet there are still basic questions about the requirements for a good extracellular microelectrode. One common source of ...confusion is how much an electrode's impedance affects the amplitude of extracellular spikes and background noise. Here we quantify the effect of an electrode's impedance on data quality in extracellular recordings, which is crucial for both the detection of spikes and their assignment to the correct neurons. This study employs commercial polytrodes containing 32 electrodes (177 μm
) arranged in a dense array. This allowed us to directly compare, side-by-side, the same extracellular signals measured by modified low impedance (∼100 kΩ) microelectrodes with unmodified high impedance (∼1 MΩ) microelectrodes. We begin with an evaluation of existing protocols to lower the impedance of the electrodes. The poly (3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT-PSS) electrodeposition protocol is a simple, stable, and reliable method for decreasing the impedance of a microelectrode up to 10-fold. We next record
using polytrodes that are modified in a 'chess board' pattern, such that the signal of one neuron is detected by multiple coated and non-coated electrodes. The performance of the coated and non-coated electrodes is then compared on measures of background noise and amplitude of the detected action potentials. If the proper recording system is used, then the impedance of a microelectrode within the range of standard polytrodes (∼0.1 to 2 MΩ) does not greatly affect data quality and spike sorting. This study should encourage neuroscientists to stop worrying about one more unknown.
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The use of disposable recyclable, eco-friendly, sustainable and low-cost devices with multiple functions is becoming a demand in the emerging area of the Internet of Things as a way ...to decrease the degree of complexity of the electronic circuits required to serve a plethora of applications. Moreover, for low-cost disposable applications, it is relevant the systems to be recyclable. The idea beyond the present study concerns to exploit our imagination with simple questions such as: What happens if it is possible to have a simple and universal device architecture, easy to implement on paper substrates, but capable to provide different multiple functionalities? It would be possible to have a common template for electronic systems on paper that would be then easily customized depending on the final application? The present study answers to these demands by reporting the physics and electronics behavior of a multigate paper transistor where paper is simultaneously the substrate and the dielectric, while a metal-oxide-semiconductor (IGZO) is used as the active channel. Moreover, the same device is able to present logic functionalities simply by varying the amplitude and frequency of the input gate signals. These transistors operate at drain voltages of 1V with low power, exhibiting ION/IOFF>104 and a mobility ≈2cm2V−1s−1, serving the specifications for a broad range of smart disposable low power electronics. To sustain all this, an analytical compact model was developed able to precisely reproduce the response of paper-based dual-gate FETs and provide full understanding of their unique and innovative operational characteristics.
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