This article presents an attractive printing technique for thin film deposition of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on flexible substrates known as ...electrohydrodynamic atomization (EHDA). Optimum flow rate and applied potential for stable cone jet mode has been confirmed through identification of process operating envelop. The uniformity and film thickness has been investigated by a field emission scanning electron microscope. The thin film shows nearly 75–82% transmittance in visible region. The electrical study shows good ohmic behavior of PEDOT:PSS thin film with the resistivity of approximately 49.6 mΩ cm.
► PEDOT:PSS thin film is deposited through electrohydrodynamic atomization technique ► Deposited PEDOT:PSS thin film showed good transparency in visible region ► Scanning electron microscopy revealed the morphology of PEDOT:PSS thin film ► Good adhesion between film and substrate due to cone-jet based coating technique
Zinc oxide (ZnO) is a useful material in the fabrication of many electronic devices because of its wide band-gap, excellent transparency and high electron mobility. Thin films of ZnO have been ...fabricated where an alcosol solution containing 7
wt.% ZnO nano-particles was synthesized and subjected to controlled flow through a metal capillary exposed to an electric field at the ambient temperature to generate an electrohydrodynamic jet, which subsequently disintegrated into droplets thereby depositing a uniform thin film of zinc oxide on the glass substrates with an average thickness of 115
nm at a constant substrate speed of 0.25
mm/s. Pure and perfectly uniform transparent films with an average transmittance of 88% have been deposited with wurtzite crystal structure and an electrical resistivity of approximately 64
Ω.cm.
Experimental Setup for EHDA Printing Technology Display omitted
► EHDA has been deployed to fabricate the active layer of ZrO2 for the memristor. ► ZrO2 thickness achieved through EHDA is around ...67nm. ► Fabricated memristor can be used to replace transistors in printed electronics. ► Fabricated memristor could be applied with CC of 100μA–1mA and then up to 5mA.
The insulating active layer has a vital role in the MIM (Metal–Insulator–Metal) structure of resistive switch (memristor). Different fabrication technologies are being used to the deposition of the active layer to explore the resistive switching in metal oxides. Electrohydrodynamic atomization (EHDA) has been used in this brief to deposit an active layer for the printed resistive switch (memristor). A thin liquid jet of solution containing ZrO2 (Zirconium Dioxide) nanoparticles was generated through a metallic capillary with a constant flow rate under the electrical forces. Liquid jet was further disintegrated into small droplets, containing nanoparticles, under the influence of electrical stresses and were collected on the ITO coated PET (Polyethylene Terephthalate) to form uniform layer of ZrO2 nanoparticles. A smooth thin film was observed with an average thickness of 67nm. Resistive (memristive) behavior was observed in the deposited thin film with ITO (Indium-Tin Oxide) as a bottom electrode and Ag as a top electrode. Bipolar reversible resistive switching was analyzed by setting different current compliances. Results reveal that EHDA has full potential to fabricate the active layer in resistive switches for printed electronics.
This paper presents the deposition of solution based composite P3HT:PCBM thin film on PEDOT:PSS coated ITO substrate via electrohydrodynamic atomization (EHDA) technique. Deposition conditions such ...as stable cone jet formation, flow rate and applied potential have been investigated. X-ray diffraction anlaysis revealed the presence of P3HT polymer in the as deposited film. Surface morphology investigated using a field emission-scanning electron microscope confirms that a uniform deposition of thin films was achieved. The current–voltage characteristics of the as deposited films show a rectifying behavior. The capacitance–voltage study indicated capacitance of the as deposited thin films depended on the frequency .
► Electrohydrodynamic atomization of P3HT:PCBM thin film on PEDOT:PSS/ITO substrate. ► Detailed optimization process for deposition of P3HT:PCBM is presented. ► X-ray diffraction pattern confirmed the presence of thiophene ring in P3HT. ► C–V analysis confirmed the capacitance influenced by frequency.
An all printed resistive memory device, a 9-bit memristor, has been presented in this study consisting of 3 × 3 memristor crossbars deposited via electrohydrodynamic inkjet printing process at room ...conditions. Transparent zinc oxide active nano-layers, directly deposited by electrospray process, are sandwiched between the crossbars to complete the metal–insulator metal structure consisting of copper–zinc oxide–silver, where Cu and Ag are used as bottom and top electrodes respectively. The 9-bit memristor device has been characterized using current–voltage measurements to investigate the resistive switching phenomenon thereby confirming the memristive pinched hysteresis behavior signifying the read–write and memory characteristics. The memristor device showed a current bistability due to the existence of metal–oxide layer which gives rise to oxygen vacancies upon receiving the positive voltage hence breaking down into doped and un-doped regions and a charge transfer takes place. The maximum ON/OFF ratio of the current bi-stability for the fabricated memristor was as large as 1 × 103, and the endurance of ON/OFF switchings was verified for 500 read–write cycles. The metal–insulator–metal structure has been characterized using X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope techniques.
► A 9-bit printed memristor device has been fabricated using Cu–ZnO–Ag structure. ► Electrohydrodynamic printing is used for the fabrication of printed memristor device. ► Complete physical & electrical characterization of the memristor device is presented. ► The maximum ON/OFF ratio of the current bi-stability was ∼1 × 103. ► The endurance of ON/OFF switchings was verified for 500 read–write cycles.
In this paper, we report an alternate technique for the deposition of nanostructured TiO
2
thin films using the electrohydrodynamic atomization (EHDA) technique using polyvinylpyrrolidone (PVP) as a ...stabilizer. The required parameters for achieving uniform TiO
2
films using EHDA are also discussed in detail. X-ray diffraction results confirm that the TiO
2
films were oriented in the anatase phase. Scanning electron microscope studies revealed the uniform deposition of the TiO
2
. The purity of the films is characterized by using Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), confirming the presence of Ti–O bonding in the films without any organic residue. The optical properties of the TiO
2
films were measured by UV-visible spectroscopy, which shows that the transparency of the films is nearly 85% in the visible region. The current–voltage (
I
–
V
) curve of the TiO
2
thin films shows a nearly linear behavior with 45 mΩ cm of electrical resistivity. These results suggest that TiO
2
thin films deposited via the EHDA method possess promising applications in optoelectronic devices.
In this study, highly transparent, 250nm thick films of Aluminum doped Zinc-oxide (ZnO:Al) are achieved on glass substrates at ambient conditions through a solution processing technique called ...electrohydrodynamic atomization. A 10wt.% monodispersed solution containing 6% ZnO:Al nanoparticles (ZnO/Al2O3) in ethanol has been synthesized first and then used in the deposition process as the working solution. Pure and uniform transparent films with an average transmittance of 93% have been deposited with crystal structure exhibiting both zincite and gahnite phases. Surface composition purity has been confirmed using X-ray photoelectron spectroscopy technique and the clear indication of Zn-2p and Al-2p peaks confirms surface integrity. Fourier Transform Infrared analysis further confirms the presence of aluminum in the samples. The electrical properties are studied by recording and analyzing the current–voltage (I–V) measurements and the resistivity has been estimated from the slope of the IV-curve which is approximately 25mΩ.cm. The layer roughness has been characterized using atomic force microscopy.
►Aluminum doped Zinc oxide (ZnO:Al) films are made via electrohydrodynamic atomization. ►ZnO:Al nano-particle ink is used to form thin films in single step at room conditions. ►Scanning electron and atomic force microscopes confirm fine layer characteristics. ►X-ray photoelectron and Fourier Transform-Infrared spectroscope confirm film purity. ►Transparent and conductive films have been fabricated with wurtzite structure.
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•Nickel oxide with different particle sizes are developed by a facile process.•The smaller particle size of 6nm with face centered cubic structure was observed.•CV and EIS study shows ...the pseudocapacitive behavior of NiO nanostructures.•NiO with smaller particle size exhibited enhanced specific capacitance.
In this work, we demonstrate the influence of nickel oxides with divergent particle sizes as the working electrodes for supercapacitor application. The nanostructured nickel oxide (NiO) is synthesized via facile sonochemical method, followed by calcination process. The crystallinity and surface purity of prepared samples are clearly examined by X-ray diffraction and Raman analysis. NiO crystallinity is significantly increased with increasing calcination temperatures. The surface analysis confirmed that the calcination at 250°C exhibited nanoclutser like NiO with average particle size of ∼6nm. While increasing the calcination temperature beyond 250°C, hexagonal shaped NiO is observed with enhanced particle sizes. The electrochemical performance confirmed the good redox behavior of NiO electrodes. Moreover, NiO with average particle size of ∼6nm exhibited high specific capacitance of 449F/g at a scan rate of 5mV/s compared to other samples with particle sizes of ∼21nm (323F/g) and ∼41nm (63F/g). This is due to the good ion transfer mechanism and effective electrochemical utilization of the working electrode.
Herein, zinc cobaltite (ZnCo2O4) nanoparticles (synthesized via hydrothermal treatment) were blended with polyaniline (PANI) (synthesized via chemical oxidative polymerization) to form PANI-ZnCo2O4 ...nanocomposite. The structural crystallinity and phase purity of PANI-ZnCo2O4 nanocomposite were authenticated by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) analysis. The morphological studies showed that the spinel structured ZnCo2O4 nanoparticles were well embedded on tubular-shaped PANI matrix, suggesting the effective connection between ZnCo2O4 nanoparticles with PANI matrix. The electrochemical performance studies of PANI-ZnCo2O4 nanocomposite for supercapacitor exhibited enhanced specific capacity of 398 C/g at a current density of 1 A/g as compared with ZnCo2O4 nanoparticles and PANI. The enhancement of electrochemical performance was contributed from the augmentation of electroactive sites for redox reaction, rapid electron transfer rate and the synergistic effect of ZnCo2O4 nanoparticles and highly conductive PANI. The fabricated PANI-ZnCo2O4//activated carbon based hybrid supercapacitor achieved high energy density (13.25 Wh/kg at 375 W/kg) as well as excellent cycling stability (∼90% retention after 3000 cycles). Furthermore, PANI-ZnCo2O4 nanocomposite was employed as a hydrazine sensor which exhibited good sensitivity of 0.43 μA μM−1 in the linear range of 0.1–0.6 mM with a low detection limit of 0.2 μM.
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•The PANI-ZnCo2O4 nanocomposite was prepared via blending process.•Dual roles of PANI-ZnCo2O4 in supercapacitor and electrochemical sensor.•High energy and power density was obtained in asymmetric supercapacitor.•PANI-ZnCo2O4 showed high sensitivity towards hydrazine.
Nowadays the most probable issues are occurring in electronic fields, necessities of high energy storage devices for electronic automobiles, consumer electronics, and comprehensive power stations. ...Supercapacitors (SCs) play an essential role in energy storage areas. A pertinent active/electrode material is playing a major role to boost SCs' efficacy, chattels of active materials will increase SCs performance. Carbonaceous materials and conducting polymers are extensively used as individual or composite electrodes. Scientists are attentively working for the progress of ground-breaking electrode materials to solve the issues in conversational capacitors (energy and power density) with outstanding performance. An in-depth examination of conducting polymer-carbsonaceous material composite are well studied. The synergic effects of conducting polymercarbonaceous material composite offer a wide range of applications in electrical and electronic fields. In this review, we have discussed the recent development of active electrode materials in SCs by compiling the recent literature. The overview of rapid developments, structures, and their electrochemical performance in SCs device application.
Schematic illustration of carbonaceous material-conducting polymer composite electrodes for Supercapacitor. Display omitted
•The conducting polymer/carbonaceous material composites are emerged with an excessive electrochemical performance.•Recent progress of conducting polymer and carbonaceous material based electrodes have been intensely studied for SCs application.•Different SCs electrodes are compared in terms of specific capacitance, energy/power density, and cyclability.
