DIKUL - logo

Search results

Basic search    Expert search   

Currently you are NOT authorised to access e-resources UL. For full access, REGISTER.

1 2 3 4 5
hits: 723
1.
  • Capture and migration of Ju... Capture and migration of Jupiter and Saturn in mean motion resonance in a gaseous protoplanetary disc
    Chametla, Raúl O; D’Angelo, Gennaro; Reyes-Ruiz, Mauricio ... Monthly Notices of the Royal Astronomical Society, 03/2020, Volume: 492, Issue: 4
    Journal Article
    Peer reviewed
    Open access

    ABSTRACT We study the dynamical evolution of Jupiter and Saturn embedded in a gaseous, solar nebula-type disc by means of hydrodynamics simulations with the fargo2d1d code. We study the evolution for ...
Full text
Available for: UL

PDF
2.
  • Stacking Switch to Achieve ... Stacking Switch to Achieve Low-Trigger and High-Holding-Voltage-Clamp Characteristics
    He, Linfeng; Salcedo, Javier A.; Hajjar, Jean-Jacques ... IEEE transactions on electron devices, 04/2020, Volume: 67, Issue: 4
    Journal Article
    Peer reviewed

    New stacking cell design topologies are introduced in this article to achieve effective electrostatic discharge on-chip protection while meeting relatively high-holding-voltage and ...
Full text
Available for: UL
3.
  • A New Low-Capacitance High-... A New Low-Capacitance High-Voltage-Tolerant Protection Clamp for High-Speed Applications
    He, Linfeng; Salcedo, Javier A.; Parthasarathy, Srivatsan ... IEEE transactions on electron devices, 08/2020, Volume: 67, Issue: 8
    Journal Article
    Peer reviewed

    A new low-capacitance clamp is introduced for high-voltage-tolerant and high-speed interface applications. An embedded stacking architecture is proposed to address latch-up-immune design requirements ...
Full text
Available for: UL
4.
  • Compact and Fast-Response V... Compact and Fast-Response Voltage Clamp for Bi-Directional Signal Swing Interface Applications
    He, Linfeng; Salcedo, Javier A.; Parthasarathy, Srivatsan ... IEEE electron device letters, 12/2018, Volume: 39, Issue: 12
    Journal Article
    Peer reviewed

    A compact bi-directional blocking voltage protection clamp with low overshoot voltage and high current handling capability is proposed. Under a high-stress 15-A very fast transmission line pulse, the ...
Full text
Available for: UL
5.
  • A rational strategy to supp... A rational strategy to support approved COVID-19 vaccines prioritization
    Burgos-Salcedo, Javier Human vaccines & immunotherapeutics, 10/2021, Volume: 17, Issue: 10
    Journal Article
    Peer reviewed
    Open access

    The World Health Organization (WHO) proposed a set of criteria to be considered for the prioritization of COVID-19 candidate vaccines for further development of phase II/III clinical trials, thinking ...
Full text
Available for: UL

PDF
6.
  • Immune network operations i... Immune network operations in COVID-19
    Burgos-Salcedo, Javier Exploration of immunology, 8/2022, Volume: 2, Issue: 4
    Journal Article
    Open access

    The immune system, whose nature lies in being a complex network of interactions, lends itself well to being represented and studied using graph theory. However, it should be noted that although the ...
Full text
Available for: UL
7.
  • High-Robustness and Low-Cap... High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection
    Qiang Cui; Salcedo, J. A.; Parthasarathy, S. ... IEEE electron device letters, 02/2013, Volume: 34, Issue: 2
    Journal Article
    Peer reviewed

    A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is developed. The low capacitance is obtained by mitigating the capacitance associated with the ...
Full text
Available for: UL
8.
  • A New Method to Estimate Fa... A New Method to Estimate Failure Temperatures of Semiconductor Devices Under Electrostatic Discharge Stresses
    Meng Miao; Yuanzhong Zhou; Salcedo, Javier A. ... IEEE electron device letters, 11/2016, Volume: 37, Issue: 11
    Journal Article
    Peer reviewed

    Thermal runaway is one of the main causes of semiconductor device failure under electrostatic discharge (ESD) stresses. An experimental method to investigate the failure temperature under such ...
Full text
Available for: UL
9.
  • Compact Thermal Failure Mod... Compact Thermal Failure Model for Devices Subject to Electrostatic Discharge Stresses
    Yuanzhong Zhou; Meng Miao; Salcedo, Javier A. ... IEEE transactions on electron devices, 2015-Dec., 2015-12-00, 20151201, Volume: 62, Issue: 12
    Journal Article
    Peer reviewed

    A leading cause of device failure under electrostatic discharge stress conditions is thermal failure. This failure occurs as a result of excessive energy dissipation which raises the temperature of ...
Full text
Available for: UL
10.
  • Long-term surveillance of t... Long-term surveillance of the feline leukemia virus in the endangered Iberian lynx (Lynx pardinus) in Andalusia, Spain (2008-2021)
    Nájera, Fernando; López, Guillermo; Del Rey-Wamba, Tere ... Scientific reports, 03/2024, Volume: 14, Issue: 1
    Journal Article
    Peer reviewed
    Open access

    Feline leukemia virus (FeLV) infection is considered one of the most serious disease threats for the endangered Iberian lynx (Lynx pardinus) Over 14 years (2008-2021), we investigated FeLV infection ...
Full text
Available for: UL
1 2 3 4 5
hits: 723

Load filters