•Solid solution limit of the Sn1−x(Zn2/3Sb1/3)xP2O7 compounds to be x = 0.15.•Highest value of 2.2 × 10–2 S cm−1 is obtained for x = 0.15 at 250 °C.•Formation of oxygen vacancies is caused by ...cosubstitution of Zn and Sb for Sn.•Interstitial proton of lattice is introduced by formation of oxygen vacancies.•The proton mobility is enhanced by the cosubstitution of Zn and Sb for Sn.
In order to investigate the effects of the Zn and Sb cosubstitution for Sn on the crystal structure and electrical conductivity of SnP2O7, Sn1−x(Zn2/3Sb1/3)xP2O7 compounds were synthesized in this study. The crystal structure refinement results show the solid solution limit of the Sn1−x(Zn2/3Sb1/3)xP2O7 compounds to be x = 0.15. The electrical conductivity of the compounds was enhanced depending on the level of the composition x. The highest value of 2.2 × 10−2 S cm−1 was obtained for x = 0.15, at 250 °C. It was suggested that the interstitial proton of the Sn1−x(Zn2/3Sb1/3)xP2O7 lattice was introduced by the formation of oxygen vacancies that originated from the cosubstitution of Zn and Sb for Sn. It was confirmed that the introduction of the interstitial proton significantly enhanced the electrical conductivity of the Sn1−x(Zn2/3Sb1/3)xP2O7 compounds. Thus, the Sn1−x(Zn2/3Sb1/3)xP2O7 compounds can be a promising candidate electrolyte with proton conducting at intermediate operating temperatures.
Paclitaxel and nanoparticle albumin-bound paclitaxel are known to cause adverse events of eye disorders, such as cystoid macular edema. However, at present, the risk factors remain unclear. ...Therefore, risk factors for eye disorders caused by paclitaxel and nanoparticle albumin-bound paclitaxel were studied. This retrospective study targeted patients who were newly administered paclitaxel or nanoparticle albumin-bound paclitaxel at Kyoto Okamoto Memorial Hospital between April 1, 2012, and March 31, 2017. Eye disorder occurrence was defined as an event in which the pharmacist confirmed the symptoms in a patient interview and the ophthalmologist diagnosed the disorder. To analyze the risk factors, logistic regression analysis using 41 factors was performed. Of 128 subjects, 13 (10.2%) had eye disorders with symptom degrees of Grades 1 and 2. The symptoms were conjunctivitis or subconjunctival hemorrhage (3.1%), visual acuity reduction (2.3%), blurred vision and eye pain (1.6% each), eye mucus, blepharitis, stye, watering eyes, photopsia, and muscae volitantes (0.8% each). In eight patients, the conditions patients improved with spontaneously or with medication use; no improvements were observed the cases of visual acuity reduction, blurred vision, or muscae volitantes. Multivariate logistic regression analysis revealed that a cumulative dose of ≥819 mg/m2 (odds ratio: 5.34, 95% confidence interval: 1.32–21.60, p=0.019) and baseline alkaline phosphatase ≥256 U/L (odds ratio: 3.74, 95% confidence interval: 1.02–13.70, p=0.046) were significant risk factors associated with eye disorders. In conclusion, it was determined that paclitaxel- and nanoparticle albumin-bound paclitaxel-related eye disorders might be influenced by cumulative dose and baseline alkaline phosphatase.
A SrZrO3 thin film with yttrium (Y) concentration of 20 at % (SZYO) was successfully deposited by the pulsed laser deposition (PLD) technique. The laser power of PLD affected Y-concentration ...significantly even though it used the same PLD target. On contrary, the laser reputation frequency and the deposition temperature did not significantly affect the composition. The SZYO film deposited at the optimized conditions was well crystallized and showed no secondary phase and showed (111) and (110) orientations when they were deposited on (111)Pt/SiOx/Si and on (111)Pd/(111)Pt/SiOx/Si substrates, respectively. This SZYO film is expected to use as an electrode of our proposed novel solid oxide fuel cells.
In this study, co-substitution of Ni and Ta was performed on SnP2O7, and their crystal structure and electrical conductivity were investigated. X-ray powder diffraction patterns showed that the ...compounds had a cubic structure identical to that of SnP2O7, but a secondary phase containing SnO2 and Ni(PO3)2 was observed for x = 0.20. Rietveld analysis was used to refine the crystal structures, revealing that the lattice parameters increased with an increase in x, up to 0.15, and then reached saturation for x = 0.20. The increase in lattice parameter is considered contradictory, but it is suggested that it may be related to the introduction of oxygen vacancies caused by the substitution of lower valence cations, resulting in an increase in P–O bond length. As a result, the co-substitution of Ni and Ta for Sn increases the interstitial proton concentration in the lattice and the electrical conductivity of the compounds was effectively improved when increasing the value of composition x; the highest electrical conductivity of 1.7 × 10−2 S cm−1 at 250 °C exhibited for Sn0.85(Ni2/3Ta1/3)0.15P2O7.
AIM To investigate the surgical therapies for gastric cancer(GC) patients of age 85 or older in a multicenter survey.METHODS Therapeutic opportunities for elderly GC patients have expanded in ...conjunction with extended life expectancy. However, the number of cases encountered in a single institution is usually very small and surgical therapies for elderly GC patients have not yet been standardized completely. In the present study, a total of 134 GC patients of age 85 or older who underwent surgery in 9 related facilities were retrospectively investigated. The relationships between surgical therapies and clinicopathological or prognostic features were analyzed.RESULTS Eighty-nine of the patients(66%) presented with a comorbidity, and 26(19% overall) presented with more than two comorbidities. Radical lymphadenectomy was performed in 59 patients(44%), and no patient received pre- or post-operative chemotherapy. Forty of the patients(30%) experienced perioperative complications, but no surgical or perioperative mortality occurred. Laparoscopic surgery was performed in only 12 of the patients(9.0%). Univariate and multivariate analyses of the 113 patients who underwent R0 or R1 resection identified the factors of p T3/4 and limited lymphadenectomy as predictive of worse prognosis(HR = 4.68, P = 0.02 and HR =2.19, P = 0.05, respectively). Non-cancer-specific death was more common in c Stage Ⅰ patients than in c Stage Ⅱ or Ⅲ patients. Limited lymphadenectomy correlated with worse cancer-specific survival(P = 0.01), particularly in c Stage Ⅱ patients(P < 0.01). There were no relationships between limited lymphadenectomy and any comorbidities, except for cerebrovascular disease(P = 0.07). CONCLUSION N o n- c a n c e r- s p e c i f i c d e a t h w a s n o t n e g l i g i b l e, particularly in c Stage Ⅰ, and gastrectomy with radical lymphadenectomy appears to be an effective treatment for cS tage Ⅱ elderly GC patients.
High-k amorphous SrTa2O6 (STA) thin films were successfully deposited by rf magnetron sputtering for gate insulators in thin-film transistor (TFT). Practical STA thin films with high dielectric ...constant of 41.8, wide band gap of 4.58 eV, and low leakage current of ~10−8 A/cm2 were obtained through by optimal sputtering condition. The TFTs with amorphous InGaZnO (IGZO) as a channel and STA as a gate insulator were fabricated and investigated for thinning effects of gate insulator on transfer characteristic. The IGZO-TFT with 70-nm-thick STA achieved high performance switching properties; (mobility of 14.9 cm2/(V·s), threshold voltage of 0.6 V, sub-threshold swing of 111 mV/decade, and on/off ratio of 1.0 × 1010). These characteristics are due to the large gate capacitance of 4.6 × 10−7 F/cm2 and low gate leakage current from use of STA.
•The SrTa2O6 thin films were successfully deposited by sputtering method.•Amorphous SrTa2O6 showed high dielectric constant with low leakage current.•InGaZnO thin-film transistor with SrTa2O6 achieved low voltage operation.
In this paper, the InGaZnO‐based thin‐film transistors (TFT) with the sputtered high‐k SrTa2O6 (STA) as a gate insulator are fabricated. The IGZO‐TFT with STA show low voltage operation below 5 V ...with good TFT performances, i.e., filed effect mobility of 11.1 cm2 V−1 s−1, threshold voltage of 0.6 V, sub‐threshold swing of 163 mV/decade, and on/off ratio of 7.8 × 109. Compared to the thermally grown SiO2 gate insulator, the sub‐threshold swing is improved by use of STA gate insulator. In addition, the high on‐current and low gate leakage current are obtained. These characteristics are attributable to the sufficient electrical properties of STA, i.e., high dielectric constant of 30 and low leakage current density of 2.6 × 10−8 A cm−2 at 300 kV cm−1.
The InGaZnO‐based thin‐film transistors (TFT) with the sputtered high‐k SrTa2O6 (STA) as a gate insulator are fabricated. This TFT shows low voltage operation below 5V with good TFT performances, i.e., filed effect mobility of 11.1 cm2 V−1 s−1, threshold voltage of 0.6 V, sub‐threshold swing of 163 mV/decade, and on/off ratio of 7.8 × 109. These characteristics are attributable to the sufficient electrical properties of STA, i.e., high dielectric constant and high insulation property.
Self-aligned (101)-one-axis-oriented PdO layer was obtained on (111) Pd films prepared on (111)Pt/TiOx/SiO2/Si abbreviated as (111)Pt/Si substrates by the heat treatment at 750°C under atmospheric ...oxygen flow. Films with (110)c-oriented SrRuO3 with perovskite structure were successfully deposited at 500°C on a (101)-oriented PdO layer by an RF magnetron sputtering method due to their relatively small lattice mismatch.
A (101)-oriented Sr(Zr0.8Y0.2)O3-δ (SZYO) film can be successfully prepared on (110)c-oriented SrRuO3 and its proton conductivity is almost the same as that of (111)c-oriented SZYO but slightly smaller than that of (111)c-oriented one. As the conductivity is strongly affected by the film crystallinity, we can conclude that the newly fabricated (110)c-oriented SZYO has almost the same crystallinity comparing to the films with other orientation.
We have successfully demonstrated that the use of (101)PdO//(111)Pd double layer is a good candidate to grow {110}-one-axis-oriented perovskite thin films on Si substrates.
•Self-aligned (101)-one-axis-oriented PdO layer were obtained on (111) Pd films•(110)cSrRuO3 perovskite can be deposited successfully on (101) PdO//Pd double layer•(101)cSr(Zr0.8Y0.2)O3–δ perovskite is also prepared by using (110)c SrRuO3 layer•(101)PdO//(111)Pd is quite effective for growing {110}-oriented perovskite films
Sol–gel-derived SrTa
2
O
6
thin films were fabricated at a low temperature of 500 °C. To improve their leakage current properties, additional UV/O
3
-assisted annealing was performed from room ...temperature to 290 °C. UV/O
3
treatment at 290 °C gave a very low leakage current that was six orders of magnitude lower than that of an untreated thin film. During UV/O
3
-assisted annealing, Si and Ti ions diffused from the substrates into the SrTa
2
O
6
thin films and occupied the Ta
5+
sites, subsequently generating Si
−
and Ti
−
. At a heating temperature of 290 °C, large amounts of Ti ions diffused throughout the SrTa
2
O
6
thin film. These Ti ions contributed to the generation of inactive combinations of
and
, which greatly reduced oxygen vacancies (V
o
). Thus, the leakage current was significantly reduced.
Assisted by UV/O3 annealing, InZnO thin-film transistors (TFTs) fabricated at a low temperature of 290°C showed a high field-effect mobility of 2.19 cm2/(V·s). This value was almost the same as that ...of InZnO TFTs annealed at 700°C without UV/O3 assistance. Si ions in the substrate were induced by UV irradiation and diffused into the InZnO thin film. They entered Zn ions sites in the InZnO matrix, and more oxygen vacancies and freely moving electrons were subsequently generated. Thus, a high mobility was obtained although the annealing temperature was lower than the pyrolysis temperature of the InZnO precursor.
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