Comparing the similarity between digital images is an important subroutine in various image processing algorithms. In this study, we present three quantum algorithms for comparing the similarity ...between two quantum images. These algorithms are applied to binary, grey and color images for the first time. Without considering the image preparation, the proposed algorithms achieve exponential acceleration than the existing quantum and classical methods in all three cases. At the end of this paper, an experiment based on the real quantum computer of IBMQ and simulations verify the effectiveness of the algorithms.
A temperature-compensated refractive index (RI) sensor based on thinned strongly-coupled seven-core fiber (SC-SCF) supermode Bragg grating and interferometer is demonstrated. The SC-SCF spliced ...between two standard single mode fibers was first tapered to 55.0 μm and then chemically etched to a waist diameter of 15.6 μm, forming a supermode interferometer. Bragg grating was successfully written into the thinned SC-SCF through the phase mask side-illumination method and two resonant dips were observed in the transmission spectrum. The transmission spectra and RI response characteristics of the device were theoretically analyzed and sim-ulated based on the modal interference theory through finite element method. The RI and temperature responses of the device were experimentally investigated, respectively. The measured RI sensitivity and temperature sensitivity of one of the interference fringe dips were 504.1 nm/RIU for RI in range of 1.335∼1.345 and −10.1 pm/ºC, respectively. The main Bragg grating dip was found to be insensitive to RI and have a temperature sensitivity of 12.3 pm/ºC. This device is attractive for temperature-compensated RI sensing applications.
High-performance thin-film transistors (TFTs) with atomic layer-deposited (ALD) ZnO channel/Al 2 O 3 dielectric were fabricated under a maximum processing temperature of 200 °C. The effects of ...postannealing temperature and time on the performance of the TFT were investigated. Under annealing at 200 °C in air, the performance of the TFT was greatly improved by increasing the annealing time to 120 min, showing a very low OFF-current of 2.98 × 10 -13 A, a small subthreshold swing (SS) of 244 mV/decade, a quite large I ON /I OFF ratio of 4 × 10 8 , and a high field-effect electron mobility of 21.9 cm 2 /V·s. Furthermore, good electrical stabilities were also demonstrated under gate-bias stress, such as a threshold voltage shift (ΔV th ) of -1.1 V and a Δ SS of 86 mV/decade under -20 V for 3000 s, a ΔV th of 0.29 V, and a Δ SS of -44 mV/decade under +20 V for 3000 s. The above results are attributed to the gradual passivation of oxygen vacancies in the ZnO channel and interface traps at the interface of ZnO/Al 2 O 3 with an increment of annealing time. Thus, the current ZnO TFT with a low thermal budget and high performance is very promising for flexible electronic applications.
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor with an atomic-layer-deposited (ALD) SiO 2 gate insulator was fabricated under a maximum processing temperature of 250 °C and compared with the ...counterpart with a plasmaenhanced chemical vapor deposited (PECVD) SiO 2 gate insulator. It was demonstrated that the ALD SiO 2 insulator could generate much better device performance than the PECVD one. This is attributed to a lower density of interfacial traps, weaker surface roughness scattering, and enhanced passivation of oxygen vacancies in the a-IGZO channel atop the ALD SiO 2 film with more OH groups. Without the need of post-annealing, the ALD SiO 2 device exhibited very good stability under a negative gate bias stress (-15 V), while maintaining superior performance such as quite high field effect mobility of 63.6 cm 2 V -1 s -1 , a low threshold voltage of -0.10 V, a small subthreshold swing of 0.14 V/decade, and a large ON/OFF current ratio of ~10 8 .
In this article, fluorine (F)-doped SnO 2 (FTO) thin-film transistors (TFTs) are fabricated by the solution process with a low process temperature (300 °C). The FTO film characteristic, TFT ...electrical performance, and stability under the negative bias illumination stress (NBIS) are improved by F doping. The enhancement in electrical performance and stability is because F can substitute oxygen atom in the lattice and oxygen vacancies in FTO system. The FTO TFT with 3 mol.% F doping ratio shows superior electrical performance with saturation mobility (μ) of 14.48 cm 2 /V·s, a threshold voltage (V TH ) of 1.01 V, a subthreshold swing (SS) of 0.19 V/decade, and an ON/OFF current ratio (I on /I off ) of 9.32 × 10 7 . Furthermore, the 3 mol.% FTO TFT shows only -0.8 V V TH shift under NBIS. The total density of states (DOSs) for the FTO TFT is extracted in order to further verify the stability improvement based on the temperature-dependence field-effect measurement. The results indicate that the simple solution-processed FTO-TFT is promising for application in electronics.
The subgap density of states (DOS) in amorphous oxide semiconductor has strong influence on the stability of thin-film transistors (TFTs). Generally, the reduction in DOS is at the expense of the ...mobility of metal oxide TFTs. To solve the issue, a strategy of fluorine anion doping is proposed to control the subgap state of metal oxide. Using the strategy, the field-effect mobility and negative bias illumination stress (NBIS) stability of metal oxide TFTs are simultaneously improved. Solution-processed InZnOF-TFTs with AlZrOx gate insulator are fabricated. Extraction of DOS in InZnOF-TFTs is performed by measuring temperature-dependent electrical characteristics. The suppression behavior of oxygen vacancies by fluorine doping for InZnOF thin films is also investigated by XPS spectra. The subgap DOS and the oxygen vacancies of InZnOF films are significantly reduced by substituting O with F anion. Compared with the conventional InZnO thin-film transistor, the field-effect mobility of InZnOF-TFT is enhanced from 7.9 to 13.4 cm
2
/V s, while the threshold voltage shift is reduced from − 4.02 to − 1.81 V under the identical NBIS conditions. It implies a crucial role of F anion doping in improving the NBIS stability of metal oxide TFTs.
A Bragg grating is successfully inscribed in a piece of strongly coupled seven-core fiber (SCF). There are two separate Bragg resonance notches observed in the transmission spectrum, corresponding to ...backward coupling of HE
-like and HE
-like supermodes of the SCF. The mode coupling mechanism of the Bragg grating is theoretically investigated via modeling and analyzing modal properties of the SCF. The theoretical results agree well with the experimental results. Since the SCF is spliced between two standard single mode fibers with central alignments at both ends, the transmission spectrum of the device also contains a set of interference fringe due to modal interference between the supermodes. The device's responses to temperature and curvature are experimentally measured, respectively. The obtained temperature sensitivities and curvature sensitivities of the supermode Bragg grating notches are 9.55 pm/°C and 9.55 pm/°C, -1.8 pm/m
and -112.3 pm/m
, respectively. The obtained temperature sensitivity and curvature sensitivity of one of the interference spectrum dips are 11.8 pm/°C and -3909.8 pm/m
, respectively. This device is potentially useful for simultaneous measurement of temperature and curvature.
The initialization of desired quantum states is usually the starting element of quantum algorithms. For quantum image processing, inefficient preparation of quantum images hinders the implement of ...algorithms on quantum devices. In this study, a ready-to-use quantum circuit simplification method for preparing quantum images is proposed. By encoding the control qubits of the multi-qubit gates as Gray code, an optimized circuit for preparing lossless quantum images is constructed using a technique for simultaneously initializing adjacent pixels. This technique decreases the necessary number of control qubits and the depth of preparation circuits. By validating the proposed algorithm on a medical image dataset, it is demonstrated that a satisfactory depth reduction can be achieved without any quality loss when preparing quantum images.
The use of environmentally friendly equipment to build artificial neural networks may be an important development trend for next-generation electronic products. Therefore, it is of great significance ...to realize a brain-excited computer by constructing a low-power and low-cost bio synapse device. However, most electrolyte-gated transistors are currently synthesized using non-biocompatible materials. Wheat flour is a biocompatible and renewable material extracted from wheat. In addition, we have found that wheat flour film has strong ionic conductivity and can therefore be used as an electrolyte material for bio synaptic transistors. An ion/electron coupled bio synapse transistor using wheat flour as the electrolyte layer exhibits excellent electrical performance at operating voltages below 2 V. The response time of ions in wheat film is estimated to be 0.82 s by measuring the pulse width of a single pulse. More importantly, some important synaptic behaviors, such as EPSC, PPF, dynamic filtering characteristics and dendritic integration, are successfully simulated by using a dual-gate (bottom gate and floating gate) in our synaptic transistors. The superlinear addition is successfully simulated by adjusting the ion response in the wheat flour film. Because the development of electronic devices for biocompatible and biodegradable materials is essential, this work may spur new directions for the development of environmental neuromorphic electronics.
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•Wheat flour is first chosen as electrolyte layer to fabricate synapse transistor.•A novel structure having double gate is firstly proposed to simulate synapses.•The value minimum energy consumption pre pulse of the transistor is only 30 pJ.•Dynamic logic functions and Superlinear summation were successfully simulated.
