In recent years, ultrawide bandgap semiconductor materials represented by aluminum nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power characteristics, stable ...high-temperature performance, low energy loss, and good ultraviolet (UV) transmittance. They have great application prospects in the fields of high-efficiency optoelectronic devices, high-power and high-frequency electronic devices, ultra-high voltage power electronic devices, deep UV warning and guidance, and deep UV-LED disinfection. The physical vapor transport (PVT) method has the advantages of a simple growth process, fast growth rate, and high crystal integrity, and has gradually become one of the most effective methods for growing bulk AlN crystals. This review systematically summarizes the latest research progress in AlN crystals grown by the PVT method in recent years, and introduces their applications in deep UV-LEDs, UV lasers and Schottky barrier diodes (SBDs). Finally, the challenges and application prospects of AlN crystals are discussed. As an important new type of direct bandgap ultrawide bandgap semiconductor material, AlN crystals have shown extremely important strategic application value. The output power of deep UV-LED devices meets practical requirements, and high-power electronic power devices are still in the verification stage. From the perspective of material superiority, they have considerable development potential.
This review systematically summarizes the latest research advances of AlN crystals grown by the PVT method and their applications.
We synthesized ZnO/In2O3 heteronanostructures by a coprecipitation method. Various characterization methods were employed to investigate the structures, morphologies, and photocatalytic properties. ...The roles of compositions and annealing temperatures on the photocatalytic activities have been systematically studied. The highest photocatalytic efficiency was observed when annealing at 800 °C with the Zn/In ratios of 1:1 in the starting materials. The charge separation process of these heterostructures was also discussed. And the effective separation of the photogenerated electrons and holes was regarded as the main reason for the high photocatalytic activity.
Compared with the first and second generation semiconductor materials, the third generation semiconductor materials exhibit higher breakdown field strength, higher saturated electron drift ...velocity,outstanding thermal conductivity, and wider band gap, suitable for manufacturing of electronic devices with high frequency, high power, radiation resistance, corrosion resistant properties, optoelectronic devices and light emitting devices. As one of the representatives of the third generation of semiconductor materials, gallium nitride（GaN） is an ideal substrate material for preparing blue-green laser, radio frequency（RF） microwave and power electronic devices. It has broad application prospects in laser display, 5G communication, phased array radar, aerospace, etc.Hydride vapor phase epitaxy（HVPE） method is the most promising method for growth of GaN crystals due to its simple growth equipment, mild growth conditions and fast growth rate. Due to the widely used quartz reactors,unintentionally doped GaN obtained b
The progress in nitrides technology is widely believed to be limited and hampered by the lack of high-quality gallium nitride wafers. Though various epitaxial techniques like epitaxial lateral ...overgrowth and its derivatives have been used to reduce defect density, there is still plenty of room for the improvement of gallium nitride crystal. Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods. These nanosheets were directly deposited on the substrate that is used for the epitaxial growth of GaN crystal. Systematic characterizations of the as-obtained crystal show that quality of GaN crystal is greatly improved. The fabricated light-emitting diodes using the as-obtained GaN crystals emit strong electroluminescence under room illumination. This simple yet effective technique is believed to be applicable in metal–organic chemical vapor deposition systems and will find wide applications on other crystal growth.
Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature ...stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO2 ）heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO2 with massive active sites. The GaN/NiCoO2 heterostructure‐based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm−2 and power density, as well as superior service life at 130 °C. The theoretical calculation further explains that the reason for the energy storage enhancement of the GaN/NiCoO2 is due to the presence of the built‐in electric fields. This work offers a novel perspective for meeting the practical application of GaN‐based energy storage devices with exceptional performance capable of operation under high‐temperature environments.
The porous GaN/NiCoO2 heterostructure is designed as an advanced electrode and assembled SCs combine with ionic liquids electrolytes, and the device displays excellent performance at 130 °C. The theoretical calculation further explained that the reason for the energy storage enhancement of the GaN/NiCoO2 is due to the presence of the built‐in electric fields.
► ZnO films with morphologies of nanorods, nanowires and nanosheets were grown on F-doped SnO2 glass substrate. ► ZnO preferentially oriented along the c-axis had the best photocurrent density, which ...may have potential use in solar cells. ► The photocurrent density for ZnO nanorods is as high as 60μA/cm2.
ZnO films with morphologies of nanorods, nanowires and nanosheets were grown on F-doped SnO2 glass substrate, which may have potential application in solar cells. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to characterize the structures and morphologies of the as-synthesized samples. The photoluminescence (PL) and the photoelectrochemical properties of ZnO films were also measured. The results showed that ZnO nanorods preferentially oriented along the c-axis and had the largest photocurrent density which is as high as 60μA/cm2.
Perovskite CsPbBr3 crystals: growth and applications Yu, Jiaoxian; Liu, Guangxia; Chen, Chengmin ...
Journal of materials chemistry. C, Materials for optical and electronic devices,
05/2020, Volume:
8, Issue:
19
Journal Article
Peer reviewed
The CsPbBr3 perovskite material has excellent optoelectronic properties such as large light absorption coefficient, high carrier mobility, long diffusion length, etc., and thus it shows good ...application prospects in solar cells, photodetectors, high-energy radiation detectors and other fields. Compared with polycrystalline thin films, a single crystal perovskite without grain boundaries has better photoelectric performance, showing photovoltaic potential with higher efficiency and stability. Therefore, the fabrication of CsPbBr3 perovskite single crystals is very important to further explore the potential of single crystal perovskites in various applications. This review systematically summarizes the latest research progress of perovskite CsPbBr3 crystal growth in recent years, and introduces its applications in photodetectors, high-energy radiation detectors, and solar cells. Finally, the challenges and perspectives of perovskite CsPbBr3 crystals are discussed.
