In this study, a model for predicting the electromigration lifetime of copper pillar bumps in ceramic packaging device was established. In order to determine the relevant parameters in the Black model of electromigration lifetime prediction, three current density levels, 2.5×10 4 A/cm 2 , 3×10 4 A/cm 2 and 3.5×10 4 A/cm 2 , were selected to conduct the electromigration tests on the Cu pillar bump in ceramic package samples at ambient temperatures of 125°C and 160°C respectively. SEM was used to observe the failure mode of bumps under different temperature and current density. The experiment of on-line monitoring of the bump resistance was used to monitor the resistance information in real time, and then obtain the electromigration lifetime of the copper pillar bumps under each load condition. By determining the current influence index n and the failure activation energy Q, this paper defines the black model of the electromigration lifetime prediction of the copper pillar bumps in the ceramic package.