E-resources
Peer reviewed
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Tadjer, Marko J.; Anderson, Travis J.; Ancona, Mario G.; Raad, Peter E.; Komarov, Pavel; Bai, Tingyu; Gallagher, James C.; Koehler, Andrew D.; Goorsky, Mark S.; Francis, Daniel A.; Hobart, Karl D.; Kub, Fritz J.
IEEE electron device letters, 06/2019, Volume: 40, Issue: 6Journal Article
Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond substrate is grown by chemical vapor deposition following removal of the original Si substrate. Crucial to the process is a ~30 nm thick SiN interlayer that has been optimized for thermal resistance. The reductions obtained in self-heating have been quantified by transient thermoreflectance imaging and interpreted using 3D numerical simulation. With a DC power dissipation level of 56 W/mm, the measured average and maximum temperatures in the gate-drain access region were 176 °C and 205 °C, respectively.
